>
Fa   |   Ar   |   En
   progress in physics of applied materials   
سال:2024 - دوره:4 - شماره:2


  tick  electronic and spintronic transport in gapped graphene-based fg/sg/fg junctions - صفحه:115-121

  tick  explaining unwanted radial oscillations in single-bubble sonoluminescence - صفحه:161-164

  tick  gamma-ray and neutron shielding capacity of glasses with various energies and 241am-be source - صفحه:103-108

  tick  go/co-mof/nimncu nanocomposite as a possible candidate for the future of the supercapacitor generations - صفحه:135-144

  tick  influence of bismuth substitution on structural and optical properties of cufe2-xbixo4 spinel structure - صفحه:189-195

  tick  investigating the influence of single fe and two fe co-doping on the structural and magnetic properties of monolayer pt2te4 pentagonal: a first principle study - صفحه:153-159

  tick  investigating the performance of tin-based perovskite solar cell with zinc selenide as an etm and graphene as an htm using scaps-1d - صفحه:171-181

  tick  physical properties of electrode materials of rechargeable lithium ion batteries via dft calculations - صفحه:165-169

  tick  pseudocapacitive performance of cobaltite and nickel cobaltite electrodes fabricated by layer-by-layer chemical deposition method - صفحه:145-151

  tick  simulation of size effects on the optical properties of ktp nanoparticles - صفحه:123-133

  tick  structural, electronic and magnetic properties of fe2tip full-heusler compound: a first-principles study - صفحه:183-188

  tick  the effect of energy band gap of channel transistor region on npn transistor performance; a numerical study - صفحه:109-114
 

Copyright 2023
Islamic World Science Citation Center
All Rights Reserved