emission enhancement of light-emitting diode by localized surface plasmon induced by ag inserts in p-gan and tio2-ag grating

The structure composed of a tio2-ag grating on the surface of p-gan layer is proposed and investigated. the performance of light-emitting diodes is enhanced by coupling of localized surface plasmon and quantum wells. in the structure, ag inserts are covered with tio2 in p-gan layer to induce localized surface plasmon. the normalized radiated powers, the normalized loss powers in ag region, and the electric field distribution of light-emitting diodes with different geometric parameters and wavelengths have been calculated by using comsol multiphysics. the results reveal that the most exciting enhancement is 40 times compared to the intensity without ag nanoparticles at the wavelength of 460 nm. the designed structure can be applied to developing light-emitting diodes of polarized monochrome blue-light emission.