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enhancement of emission efficiency of deep-ultraviolet algan quantum wells through surface plasmon coupling with an al nanograting structure
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نویسنده
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su chia-ying ,chen wei-han ,kuo yang ,lin chun-han ,su ming-yen ,tsai meng-che ,chang wen-yen ,hsieh chieh ,tu charng-gan ,yao yu-feng ,chen hao-tsung ,kiang yean-woei ,yang c. c.
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منبع
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plasmonics - 2018 - دوره : 13 - شماره : 3 - صفحه:863 -872
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چکیده
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The enhancement of the internal quantum efficiency (iqe) of deep-ultraviolet al x ga1-x n/al y ga1-y n (x < y) quantum wells (qws) by fabricating one-dimensional al nanogratings on a qw structure for inducing surface plasmon (sp) coupling is demonstrated. through temperature-dependent photoluminescence (pl) measurement, the enhancements of iqe in different emission polarizations are illustrated. due to the small difference in energy band level between the heavy/light hole and split-off valence bands, the iqes of the transverse electric- (te-) and transverse magnetic- (tm-) polarized emissions are about the same. when emission polarization is perpendicular to al-grating ridges, the sp resonance mode for coupling with the qws is dominated by localized surface plasmon (lsp). when emission polarization is parallel with al-grating ridges, the coupled sp resonance mode mix lsp and sp polariton. in this polarization, lsp can be excited because of the width fluctuation of a grating ridge. when the excitation laser polarization is perpendicular to al-grating ridges, the strong lsp resonance at the excitation laser wavelength leads to stronger excitation and hence higher iqe levels.
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کلیدواژه
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surface plasmon resonance ,deep ultraviolet ,light-emitting diode ,internal quantum efficiency ,localized surface plasmon
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آدرس
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national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, tung nan university, department of energy and refrigerating air-conditioning engineering, section 3, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, department of electrical engineering, section 4, taiwan, national taiwan university, institute of photonics and optoelectronics, section 4, department of electrical engineering, section 4, taiwan
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Authors
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