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dual-band infrared near-perfect absorption by fabry-perot resonances and surface phonons
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نویسنده
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wu jipeng ,guo jun ,wang xi ,jiang leyong ,dai xiaoyu ,xiang yuanjiang ,wen shuangchun
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منبع
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plasmonics - 2018 - دوره : 13 - شماره : 3 - صفحه:803 -809
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چکیده
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In this article, we present a simple absorber design which enables dual-band near-perfect absorption at infrared (ir) frequencies. the absorber is an unpatterned hbn/dielectric/hbn triple layer, with a 1150-nm-thick hbn film as the top layer, a 850-nm-thick dielectric film as the middle layer, and a hbn substrate. unlike the metal/dielectric/metal triple layer, it is found that the high efficiency absorption at specific wavelengths is mainly caused by two mechanisms: fabry-perot (fp) resonances and surface phonons. the absorption response is found sensitive to the top and middle layers. the two mechanisms can be coupled to affect the absorption spectra by choosing a proper thickness of the top and middle layers.
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کلیدواژه
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infrared ,absorption ,fabry-perot ,thin films
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آدرس
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key laboratory of optoelectronic devices and systems of ministry of education and guangdong province, shenzhen university, szu-nus collaborative innovation center for optoelectronic science and technology, college of optoelectronic engineering, china. key laboratory for micro-/nano-optoelectronic devices of ministry of education, hunan university, school of physics and electronics, china, key laboratory of optoelectronic devices and systems of ministry of education and guangdong province, shenzhen university, szu-nus collaborative innovation center for optoelectronic science and technology, college of optoelectronic engineering, china, key laboratory of optoelectronic devices and systems of ministry of education and guangdong province, shenzhen university, szu-nus collaborative innovation center for optoelectronic science and technology, college of optoelectronic engineering, china, key laboratory of optoelectronic devices and systems of ministry of education and guangdong province, shenzhen university, szu-nus collaborative innovation center for optoelectronic science and technology, college of optoelectronic engineering, china, key laboratory of optoelectronic devices and systems of ministry of education and guangdong province, shenzhen university, szu-nus collaborative innovation center for optoelectronic science and technology, college of optoelectronic engineering, china, key laboratory of optoelectronic devices and systems of ministry of education and guangdong province, shenzhen university, szu-nus collaborative innovation center for optoelectronic science and technology, college of optoelectronic engineering, china. key laboratory for micro-/nano-optoelectronic devices of ministry of education, hunan university, school of physics and electronics, china, key laboratory for micro-/nano-optoelectronic devices of ministry of education, hunan university, school of physics and electronics, china
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Authors
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