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a tunable ultra-broadband metamaterial absorber with multilayered structure
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نویسنده
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dao rina ,kong xinru ,zhang hai-feng ,tian xingliang
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منبع
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plasmonics - 2020 - دوره : 15 - شماره : 1 - صفحه:169 -175
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چکیده
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In this article, we demonstrate a tunable ultra-broadband metamaterial absorber (tuma) in terahertz (thz) band which is based on the multilayered structure composed of an au reflective layer, polyimide dielectric layers, and vanadium dioxide (vo2) periodic structures, respectively. we gain the tunable absorption spectra because of the room temperature phased-changed character of vo2. the relative bandwidth reaches to 81.2% and the absorption rate is over 90% at the frequency range of 1.63–3.86 thz when the temperature (t1) is 350 k, but when t1 = 300 k, the presented absorber is acted as a reflector whose absorption is small besides the frequency points of 9.75 thz and 9.81 thz. for the sake of comprehending the physical mechanism in-depth, the electric field (e-field) diagrams, the surface current distributions and the power loss density (pld) of the tuma are investigated. the influences of structural arguments and incident angle (θ) on the absorption are also analyzed. the emulated consequences show that the absorption spectrum can be regulated by changing structural parameters and incident angle and the tunable absorption regions can be obtained by altering the external temperature.
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کلیدواژه
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ultra-broadband absorber ,tunable thz absorber ,vanadium dioxide
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آدرس
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nanjing university of posts and telecommunications, college of electronic and optical engineering & college of microelectronics, china, nanjing university of posts and telecommunications, college of electronic and optical engineering & college of microelectronics, china, nanjing university of posts and telecommunications, college of electronic and optical engineering & college of microelectronics, china. state key laboratory of millimeter waves of southeast university, china, nanjing university of posts and telecommunications, college of electronic and optical engineering & college of microelectronics, china
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Authors
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