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surface plasmon coupling with radiating dipole for enhancing the emission efficiency and light extraction of a deep ultraviolet light emitting diode
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نویسنده
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yang yafeng ,sun huiqing ,zhang yaohua ,su ha ,shi xicheng ,guo zhiyou
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منبع
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plasmonics - 2020 - دوره : 15 - شماره : 3 - صفحه:881 -887
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چکیده
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In this paper, we numerically investigated the emission characteristics of surface plasmon (sp)-enhanced deep ultraviolet light emitting diode (duv-led) by employing al/al2o3 core-shell nanoparticle(np) structure on the p-gan contact layer by utilizing finite-difference time-domain (fdtd) method. the results suggest that normalized dipole power of te (tm) polarization is enhanced (inhibited) in the duv range by coupling with in-plane substrate localized surface plasmon (lsp) mode from al/al2o3 core-shell nanoparticle (np). it is found that normalized upward extraction power for both polarizations can also be significantly increased by scattering effect when photons and excitons coupling with in-plane air lsp mode induced on the np; thus, the light extraction efficiency (lee) can be substantially enhanced. the depth d between quantum well (qw) and np and np size have a remarkable influence on lsp resonance wavelength. through careful regulation of np size and depth d, the emission characteristics in duv range (240–280 nm) exhibit a considerable amelioration.
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کلیدواژه
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localized surface plasmon ,algan ,light emitting diodes ,finite-difference time-domain method
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آدرس
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south china normal university, institute of semiconductor science and technology, china, south china normal university, institute of semiconductor science and technology, china. guangdong provincial engineering technology research center for low carbon and advanced energy materials, china, south china normal university, institute of semiconductor science and technology, china, south china normal university, institute of semiconductor science and technology, china, south china normal university, institute of semiconductor science and technology, china, south china normal university, institute of semiconductor science and technology, china. guangdong provincial engineering technology research center for low carbon and advanced energy materials, china
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Authors
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