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Influence of synthesis temperature on cobalt metal-organic framework (Co-MOF) formation and its electrochemical performance towards supercapacitor electrodes
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نویسنده
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Wenlu Xuan ,Rajendran Ramachandran ,Changhui Zhao ,Fei Wang
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منبع
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journal of solid state electrochemistry - 2018 - دوره : 22 - شماره : 12 - صفحه:3873 -3881
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چکیده
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we have synthesized cobalt metal-organic framework (co-mof) at different temperatures through solvothermal route as metal-organic frameworks which can be used for supercapacitors. the effect of synthesizing temperature on co-mof’s structure and porous behavior were analyzed with various characterization techniques like x-ray diffraction, brunauer-emmett-teller surface analyzer, scanning electron microscope, and transmission electron microscope. the charge storage performance of the as-prepared co-mof’s was carried out in 3 m koh. the results proved the excellent redox behavior of co-mofs, and a maximum specific capacitance of 952.5 f g−1 was obtained for co-mof/150 (synthesized at 150 °c) at a current density of 0.25 a g−1. the higher specific surface area and micropore of co-mof/150 significantly heightened the electrolyte ion transport during the electrochemical performance.
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کلیدواژه
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Metal-organic framework ,Specific capacitance ,Temperature ,Specific surface area
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آدرس
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Southern University of Science and Technology (SUSTech), Department of Electrical and Electronic Engineering, China, Southern University of Science and Technology (SUSTech), Department of Electrical and Electronic Engineering, China. city:Shenzhen, Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices, China. SUSTech Academy for Advanced Interdisciplinary Studies, China, Southern University of Science and Technology (SUSTech), Department of Electrical and Electronic Engineering, China. city:Shenzhen, Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices, China, Southern University of Science and Technology (SUSTech), Department of Electrical and Electronic Engineering, China. city:Shenzhen, Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices, China. Chinese Academy of Sciences, State Key Lab of Transducer Technology, China
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Authors
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