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Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering
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نویسنده
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Hajakbari Fatemeh ,Hojabri Alireza ,Mojtahedzadeh Larijani Majid
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منبع
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journal of applied chemical research - 2014 - دوره : 8 - شماره : 3 - صفحه:45 -52
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چکیده
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Aluminum nitride (aln) thin films have potential applications in microelectronic and optoelectronic devices. in this study, aln thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. the x-ray diffraction (xrd) spectra revealed that the structure of films with thickness of 50-150 nm was amorphous, while the polycrystalline hexagonal aln with a rough surface was observed at a thickness of 300 nm. also, the formation of aln in amorphous films is identified by fourier transform infrared (ftir) spectroscopy. atomic force microscopy (afm) study confirms that the surface roughness and average grain size of films increased with film thickness.
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کلیدواژه
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AlN ,Ion beam sputtering ,optical properties ,Structural properties
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آدرس
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islamic azad university, Physics Department, ایران, islamic azad university, Department of Physics, ایران, Nuclear Science and Technology Research Institute, Agricultural Medical and Industrial Research School, ایران
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Authors
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