Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices

In this work, aluminum nitride (aln) thin films with different thicknesses were deposited on quartzand silicon substrates using single ion beam sputtering technique. the physical and chemicalproperties of prepared films were investigated by different characterization technique. x-raydiffraction (xrd) spectra revealed that all of the deposited films have an amorphous structure. theal-n bond information of deposited films on silicon substrates was identified by fourier transforminfrared (ftir) spectroscopy. ftir results confirmed the formation of aln films in preparedsamples. atomic force microscopy (afm) revealed that the surface of films was smooth with lowvalues of roughness. the low values of roughness can be caused the low acoustic loss in aln films,which is interesting for applications in electro-acoustic devices.