a novel soi mesfet by implanted n layer (inl-soi) for high performance applications

This paper introduces a novel silicon-on-insulator (soi) metal–semiconductor field-effect transistor (mesfet) with an implanted n layer (inl-soi mesfet) to improve the dc and radio frequency characteristics. the dc and radio frequency characteristics of the proposed structure are analyzed by the 2-d atlas simulator and compared with a conventional soi mesfet (c-soi mesfet). the simulation results show that the proposed structure has an excellent effect on the driving current. the breakdown voltage of the inl-soi mesfet structure gets a 33.33% enhancement when compared with that of the c-soi mesfet structure. other main characteristics such as maximum output power density, maximum oscillation frequency, and maximum available gain have been evaluated and improved in the proposed structure.