n+ pocket core-shell nanotube tunnel field-effect transistor

One of the attractive candidates for improving the performance of tunnel transistors is cylindrical structures due to their impressive electrostatic control of the gate. but the on-state current of tunnel transistors is still very low compared to mosfets. an alternative is to use core-shell nanotubes rather than nanowires. in this article, we present a core-shell tfet nanotube based on a heterogeneous germanium/silicon structure. in our proposed structure, an n+ pocket is employed to enhance the on-state current. a possible manufacturing method is also proposed that is fully compatible with cmos  technology. the main parameters of this transistor are 97.85 μa / μm on-state current, ion / ioff ratio of 8.26×108, ssavg  mv/dec 21.15, and ft of 878.95 ghz.