a numerical study on the relationship between the doping and performance of p3ht:pcbm organic bulk heterojunction solar cells

In this study, we investigate the influence of p-doping on the device efficiency ofbulk heterojunction solar cells. taking advantage from the finite element method and applyingthe boundary conditions, we solve the self-consistent modified drift-diffusion equations tocalculate the desired parameters such as the short circuit current, fill factor, and open circuitvoltage. we find that an optimum doping level in the active layer of the device canremarkably enhance the performance. the numerical results are consistence with thepreviously reported experimental results in doped bulk heterojunction solar cells. oursimulation results confirm that doping considerably affects the performance of organic solarcells.