intrinsic layer manipulation in ge-si lateral p-i-n ‎photodetector for fast detection ‎

In this study, the effect of intrinsic region’s width on dark current, photocurrent, and ‎bandwidth has been investigated based on optical and electrical simulations of the presented ‎ge-si lateral p-i-n photodetector. detailed optical and electrical analysis have been carried ‎out using finite difference time domain and drift- diffusion methods, respectively. the field ‎absorption profiles and eye diagram calculations prove that the contacts positions and the ‎width of the intrinsic region plays a main role in photodetector’s characteristics. the results ‎show that the presented structure for intrinsic layer thickness of 4μm provides the dark ‎current, photocurrent, and responsivity of 0.28μa, 640 μa, and 0.55 a/w, respectively. the ‎bandwidth of 2.4 ghz has been acquired and the eye diagram analysis are obtained for 2.5 ‎gb/s, 6 gb/s, and 10 gb/s. the study provides promising design rule for real-time detection ‎applicable in biophotonics and lab on a chip‎