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investigation of structural and electronic properties of gan nanosheet
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نویسنده
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ashouria tara ,jalili seifollah ,ghassemi mahjan mohammad
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منبع
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بيست و سومين كنفرانس شيمي فيزيك انجمن شيمي ايران - 1400 - دوره : 23 - بیست و سومین کنفرانس شیمی فیزیک انجمن شیمی ایران - کد همایش: 00210-50174 - صفحه:0 -0
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چکیده
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We have performed the first-principles calculations on the structural and electronic properties of the 2d gan nanosheet. in this work, the electronic properties of pristine gan monolayer have been studied using a first-principles calculation based on dft. the results unveil that these semiconductor monolayer sheets are promising materials for electrical sensors and due to their tunable bandgap semiconductor on the application of the electric field
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کلیدواژه
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density functional theory; two-dimensional gallium nitride; electronic properties ,structural properties
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آدرس
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, iran, , iran, , iran
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پست الکترونیکی
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mahjani@kntu.ac.ir
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Authors
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