in-situ synthesis of nitrogen-doped mos2 quantum dots using pulsed laser ablation in liquid nitrogen medium

Nitrogen doped mos2 quantum dots (n- mos2 qds) are fabricated by pulsed laser ablation (pla) process in liquid nitrogen (ln2). in fact, not only ln2 facilitates the condensation of the laser-induced plasma plume to produce mos2 qds and some by-products such as nanosheet, but also provides an optimum condition for n-doped mos2 synthesis as a p-type semiconductor. the structural and optical properties synthesized products are investigated using transmission electron microscopy (tem), uv−vis−near infrared absorption spectroscopy and photoluminescence spectroscopy techniques. the tem image shows formation of mos2 qds. the tuck plot is observed for a direct band-gap mos2 qds (4.18 ev). thus, pla provides a single-stage way to clean and green synthesis the mos2 qds suspension without a need of high vacuum devices and additional chemical components. moreover, doping provides an advantage to engineering the optical and electrical characteristics of mos2.