effect of the multiplication layer width on the characteristics of an inp/ingaas avalanche photodiode

In this study, the correlation between the multiplication layer width and the dark current, the breakdown voltage, and the punch-through voltage of a sagcm (separate absorption, grading, charge, and multiplication layer) inp/ingaas apd was studied. the simulation took place using silvaco victory tcad. the substantial models were utilized, namely the srh, auger, and optical recombinations, in addition to impact ionization and band-to-band tunneling models. the results suggest that the multiplication layer width significantly impacts dark current. moreover, the punch-through voltage varies linearly with the multiplication layer width, while the breakdown voltage varies non-linearly.