simulation of graphane diode (p-n junction) using green function method

In this letter, we simulate the graphane p-n junction performance. the simulation method is based on solving poisson and current equations by using green function method. the green function method gives a simple and fast tool for solving poisson equation. our analysis method is different compared to earlier report about analysis of graphane p-n junction. by using the presented method, the electrical field, electrical potential, and carrier concentration in device are calculated. our results are in agreement with numerical and experimental results reported by other researchers. due to taking into account the carrier concentration in space charge region, the precision of our results is .better than former ones