alternating rectifier in sdlva by power detector: a novel technique ‎for improved chip area and power consumption

A novel method to detect microwave signals power in successive detection logarithmic video amplifier (sdlva) based on single metal-oxide semiconductor field effect transistor (mosfet) is proposed. this is an alternative for the conventional method of rectifying that logarithmic amplifiers are being used to detect a rf signal power. a complete design and analysis of circuit functioning in saturation region of mosfet operation is discussed. simple structure, low power consumption, small chip area, excellent operation in microwave frequencies and low temperature variation makes it suitable for on-chip microwave signal power detecting. design of detector is performed in standard 0.18μm rf tsmc cmos process. the design layout and post layout simulation results in k band (18-26.5 ghz) are presented.