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phosphorene pn junctions as carrier rectifiers
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DOR
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20.1001.2.9819097974.1398.4.1.50.5
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نویسنده
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zare moslem ,bahamin pili alihasan ,layeghnehad rahman
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منبع
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كنفرانس فيزيك رياضي ايران - 1398 - دوره : 4 - چهارمین کنفرانس فیزیک ریاضی ایران - کد همایش: 98190-97974 - صفحه:0 -0
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چکیده
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Quantum charge transport of nnn and npn junctions based on phosphorene is evaluated by solving the relevant quantum-mechanical problem for a potential step. we show that both the transmission probability and charge conductance strongly depend on the chemical potential and length of the middle tunnel barrier, and have an oscillating behavior with increasing barrier height and length, whose oscillating amplitudes can be controlled by means of a top gate voltage in the second segment. the perfect transmission can be selected by tuning the chemical potential and length of the middle region as well as the incidence angle of the carriers. in particular, for the nnn regime for the lightly doped case of the middle region, the transmission nearly becomes perfect for any width of the middle region. the resulting electronic properties show that the planar pn junctions (pnjs) based on phosphorene could be used as rectifiers, showing excellent tunability and novel functionalities.
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کلیدواژه
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charge transport ,transmission probability ,phosphorene ,pn junction
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آدرس
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department of physics yasouj university yasouj- iran, department of physics yasouj ministry of education iran, department of physics shahid beheshti university tehran iran
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Phosphorene pn junctions as carrier rectifiers
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Authors
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Zare Moslem ,Bahamin Pili Alihasan ,Layeghnehad Rahman
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Abstract
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Quantum charge transport of nnn and npn junctions based on phosphorene is evaluated by solving the relevant quantum-mechanical problem for a potential step. We show that both the transmission probability and charge conductance strongly depend on the chemical potential and length of the middle tunnel barrier, and have an oscillating behavior with increasing barrier height and length, whose oscillating amplitudes can be controlled by means of a top gate voltage in the second segment. The perfect transmission can be selected by tuning the chemical potential and length of the middle region as well as the incidence angle of the carriers. In particular, for the nnn regime for the lightly doped case of the middle region, the transmission nearly becomes perfect for any width of the middle region. The resulting electronic properties show that the planar pn junctions (PNJs) based on phosphorene could be used as rectifiers, showing excellent tunability and novel functionalities.
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Keywords
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