cds quantum dot sensitized solar cells prepared using al3+ doping into tio2 photoanodes

Some quantum dot-sensitized solar cells (qdsscs) were fabricated by doping al3+ ions into the tio2 in order to improve their efficiency results indicated that the photovoltaic parameters of the optimized cell were boosted compared with those of the reference cell which was free of al3+ qds indicating improvements in efficiency, current density and open-circuit voltage, respectively it was found that the η value was increased by doping 01–03% of al3+ into tio2 paste but adding more amounts (04 and 05%) decreased the cell efficiency the highest efficiency was 208% by al3+ doping into the tio2 photoanode which was 45% higher than that of the reference cell (η=143% for the cell made only using tio2/cds/zns photoanode) the short circuit current was increased from 658 macm–2 in al3+ free cell to 1149 macm–2 in the 03% al3+-doped cell the open circuit voltage was enhanced from 0529 v in al-free cell to 0579 v in the 03% al3+-doped cell thus, addition of 03%wt al3+ as a dopant was appropriate to attain suitable photocurrent efficiency for the qdsscs because it could be used in a minimum amount to improve the electron transport, drop the recombination rate and increase the cell efficiency