Study the Effect of Thermal Treatment and Variation of CdS Thickness on Structural Properties of CdS/CdTe Heterojunction

A polycrystalline cds/cdte heterojunction prepared by thermal evaporation technique atsubstrate temperature of 373 k and heat treatment for annealing temperature 573 k for different duration times of annealing (ta) 60 and 120 min. under vacuum of (10-5) mbar and different thicknesses of cds layer of about 1000å, 1500å and 2000å. the x-ray diffraction (xrd) technique shows polycrystalline structure and had a mixture of cubic and hexagonal structure.the recrystallization of films enhanced thermally represented by increasing the grain size. the cds/cdte heterojunction with the higher thickness of cds layer shows better crystal structure.