simulation and fabrication of 3.5w x-band power amplifier using discrete gan hemt transistors
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نویسنده
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forouzanfar mehdi
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منبع
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majlesi journal of telecommunication devices - 2021 - دوره : 10 - شماره : 4 - صفحه:165 -168
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چکیده
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This paper presents different steps of simulation and fabrication of a power amplifier, which was realized using a discrete gan hemt transistor in the frequency range of 8.8-9.2 ghz. the required wire bonds and matching circuits were characterized using three-dimensional simulations in hfss and momentum ads software. the fabricated power amplifier provides an output power of 3.5w and a power gain of 13 db.
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کلیدواژه
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gan hemt ,discrete gan hemt transistors ,matching circuit ,output power ,x-band
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آدرس
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birjand university, electronics group, iran
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پست الکترونیکی
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forouzanfar@birjand.ac.ir
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