influence of temperature on energy band gap and other properties of undoped and cadmium doped manganese sulphide (mns:cd) synthesized for photovoltaic and optoelectronic application

The synthesis of undoped and ccadmium doped manganese sulphide (mns:cd) films consists of; manganese (ii) acetate tetrahydrate  (c4h6mno4.4h2o), cadmium sulphate (cdso4), and thiourea sc(nh2)2. the electrochemical deposition (ecd) method was adopted in this research. the samples’ morphological, structural, elemental, optical, and thickness were studied using appropriate techniques. the films exhibited uniform distribution of spherical balls from the morphological studies while the structural features showed crystalline peaks at (100), (002), (101, (200)) and (203) planes at 2θ (22.66, 27.77, 32.44, 36.25 and 42.80) angels. the elemental composition analysis of the deposited samples confirmed the elements deposited in the samples. for optical studies, we observed enhanced characteristics upon doping. the absorbance, transmittance, and reflectance increase as the incident radiation wavelength increases with an increase in bandgap energy from 1.8 ev – 3.6 ev. the synthesized films find potential application in photovoltaic and optoelectronics. the material thickness obtained was seen to vary directly proportionally with the energy band gap values. more so, the addition of cd to pure mns and increase in deposition temperature for mns:cd increased the thickness of the material.