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simulation and characterization of pin photodiode for photonic applications
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نویسنده
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ahmad waqas ,ali muhammad umair ,laxmi vijay ,syed ahmed shuja
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منبع
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asian journal of nanoscience and materials - 2018 - دوره : 1 - شماره : 3 - صفحه:122 -134
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چکیده
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Research conducted on silicon based photodetector technology has recently shown rapidly growing momentum to develop the robust silicon based detectors for photonic applications. the thrust is to manufacture low cost and high efficiency detectors with cmos process compatibility. in this study, a new design and characterization of pin photodiode is envisaged. the simulation tool, silvaco tcad (and its variants), was used to design and simulate the processes of the device. electrical and optical measurements such as i-v characteristics (dark current), and internal/external quantum efficiencies were analysed to evaluate the designed and processed device structure for its potential applications in photonics and other detection mechanisms.
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کلیدواژه
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pin photodiode ,cmos ,iv characteristics ,quantum efficiency
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آدرس
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shenzhen university, szu-nus collaborative innovation centre for optoelectronic science & technology, college of optoelectronic engineering, china. international islamic university, centre for advanced electronics & photovoltaic engineering, pakistan, peking university, college of engineering, department of materials science and engineering, china, shenzhen university, shenzhen university, thz technical research center, college of electronic science and technology, china, international islamic university, centre for advanced electronics & photovoltaic engineering, pakistan
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پست الکترونیکی
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ahmad.shuja@iiu.edu.pk
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Authors
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