effect of sulphide concentration on some physical properties of cu₂basns₄ nanostructured thin films

In this work, cu2basns4 thin films were deposited on soda-lime glass by successive ionic layer adsorption and reaction (silar) technique at different concentrations of sodium sulfide, with a thickness of about 350 ±10 nm measured by the gravimetric method. the thin films structural and morphological properties were investigated using x-ray diffraction (xrd), raman spectroscopy, field emission scanning electron microscopy (fe-sem), and atomic force microscopy (afm), as well as optical properties using a uv-vis spectrophotometer at the wavelength range (300-900) nm. optical band gap of cbts thin films decreased from (1.818 to 1.673) ev when concentrations of sodium sulfide increased from (0.04 to 0.12) m. the cu2basns4 (cbts) films have a high absorption coefficient (α > 104 cm-1), indicating allowed direct electron transmission. xrd measurements of cu2basns4 (cbts) films revealed a trigonal crystal structure. the xrd pattern preferred the (104) orientation, which has a high intensity and indicates that crystallization is most likely to occur along this plan. raman spectroscopy of cbts thin films revealed a protruding peak at ~341 cm-1. the morphological findings and fe-sem photographs of the thin film surface revealed various structures and forms, one of which resembled cauliflower. electrical tests revealed the conductivity of (p-type). the calculated electrical conductivity of cbts thin films was found in the range of 0.06-0.242 (ω.cm)-1. based on the findings of the study, the cu2basns4 (cbts) thin films look to be an excellent choice for an absorber layer in solar cells.