design and fabrication of a multi-junction hybrid heterostructure based on zno/cuo/ps/si for advanced optoelectronic applications

The study designs a vertically stacked ag:zno/cuo/ps/si hybrid heterojunction to enhance optoelectronic performance through material synergy and ag doping. zno, cuo, and ag structures were analyzed; the ag:zno layer was doped at 3%, 5%, and 7% and deposited on porous silicon. structural tests showed average crystallite sizes of 25.20 nm (ag), 31.42 nm (cuo), and 35.16 nm (zno). afm revealed the smoothest surface at 3% ag (sq = 19.11 nm), while 5% and 7% were less smooth. optical band gaps showed quantum confinement: 2.37 ev (ag), 3.57 ev (cuo), 3.71 ev (zno). the device with 7% ag achieved the highest efficiency (0.3125) and pmax (27.60 μw). the 5% sample had 0.1027 efficiency and 9.09 μw pmax, and 3% had 0.0964 and 8.68 μw. results indicate lower doping yields smoother surfaces reducing recombination, while higher ag content improves optical response and transport, boosting photovoltaic performance.