Application of Scanning Hall Probe Microscopy Technique at Room Temperature 300K.

Active areas of bismuth hall probe sensors in the range (0.1 – 1) µm have been fabricated on si/sio2 with gaas substrates at thickness of bismuth from (40, 60 and 70) nm by electron beam lithography (ebl) and lift-off process. scanning hall probe microscopy (shpm) technique at room temperature (300) k used to study hall voltage, characterization of the noise figures and minimum detectable fields. results are presented for both 0.4µm sensor, which is found minimum detectable fields (bmin) 1.1 g/ hz0.5 with dc currents about 5µa. but minimum detectable fields for hp size 0.6 µm at dc currents 20µa is bmin 0.6 g/hz0.5. the performance of our hall probe devices at 300k could be improved still further are discussed.