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Opto-electronic properties of ternary chalcopyrite A1B IIIC2 VI and AIIBIVC 2 V semiconductors
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نویسنده
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ahmad s. ,ashraf m.
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منبع
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pakistan journal of scientific and industrial research series a: physical sciences - 2013 - دوره : 56 - شماره : 3 - صفحه:125 -130
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چکیده
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An investigation has been carried out for various crystal parameters like homopolar gap (eh),heteropolar gap (ec),average gap (eg) and refractive index (n). these estimated values are used to calculate the ionicity of ternary chalcopyrite semiconductors. based on the complex crystal chemical bond theory,the moss formula which is for one type of bond only has been extended to calculate the refractive index (n). the estimated refractive index is used to evaluate the ionicity of ternary chalcopyrite semiconductors. the results have been compared with the literature ones. the calculated values are in fair agreement with previous reported values.
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کلیدواژه
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Energy gap; Ionicity; Refractive index; Ternary chalcopyrite semiconductors
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آدرس
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department of radiological physics and bio-engineering,sher-i-kashmir institute of medical sciences, India, department of radiological physics and bio-engineering,sher-i-kashmir institute of medical sciences, India
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Authors
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