Super-resolution raman spectroscopy by digital image processing

We demonstrate the results of a strain (stress) evaluation obtained from raman spectroscopy measurements with the super-resolution method (the so-called super-resolution raman spectroscopy) for a si substrate with a patterned sin film (serving as a strained si sample). to improve the spatial resolution of raman spectroscopy,we used the super-resolution method and a high-numerical-aperture immersion lens. additionally,we estimated the spatial resolution by an edge force model (efm) calculation. one- and two-dimensional stress distributions in the si substrate with the patterned sin film were obtained by super-resolution raman spectroscopy. the results from both super-resolution raman spectroscopy and the efm calculation were compared and were found to correlate well. the best spatial resolution,70 nm,was achieved by super-resolution raman measurements with an oil immersion lens. we conclude that super-resolution raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors,and we believe that the super-resolution method will soon be a requisite technique. © 2013 motohiro tomita et al.