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Electronic properties and density of states of self-assembled GaSb/GaAs quantum dots
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نویسنده
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nowozin t. ,wiengarten a. ,bonato l. ,bimberg d. ,lin w.-h. ,lin s.-y. ,ajour m.n. ,daqrouq k. ,balamesh a.s.
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منبع
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journal of nanotechnology - 2013 - دوره : 2013 - شماره : 0
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چکیده
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The electronic properties of a self-assembled gasb/gaas qd ensemble are determined by capacitance-voltage (c-v) and deep-level transient spectroscopy (dlts). the charging and discharging bias regions of the qds are determined for different temperatures. with a value of 335 (±15) mev the localization energy is rather small compared to values previously determined for the same material system. similarly,a very small apparent capture cross section is measured (1·10-16 cm2). dlts signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the qds in the ensemble. © 2013 t. nowozin et al.
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آدرس
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institut für festkörperphysik,technische universität berlin,hardenbergstraße 36, Germany, institut für festkörperphysik,technische universität berlin,hardenbergstraße 36, Germany, institut für festkörperphysik,technische universität berlin,hardenbergstraße 36, Germany, institut für festkörperphysik,technische universität berlin,hardenbergstraße 36,10623 berlin,germany,king abdulaziz university, Saudi Arabia, research center for applied sciences,academia sinica, Taiwan, research center for applied sciences,academia sinica, Taiwan, electric and computer engineering department,king abdulaziz university, Saudi Arabia, electric and computer engineering department,king abdulaziz university, Saudi Arabia, electric and computer engineering department,king abdulaziz university, Saudi Arabia
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Authors
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