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Effect of chlorine plasma treatment on electronic properties of GIZO thin film grown on SiO2/Si substrate
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نویسنده
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tahir d. ,oh s.k. ,kang h.j. ,heo s. ,chung j.g. ,lee j.c.
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منبع
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journal of mathematical and fundamental sciences - 2013 - دوره : 45 - شماره : 3 - صفحه:209 -217
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چکیده
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The effect of chlorine plasma treatment on electronic properties of gizo grown on sio2/si by rf magnetron sputtering was investigated using xray photoelectron spectroscopy (xps),reflection electron energy loss spectroscopy (reels),and secondary ion mass spectroscopy (sims). sims depth profiles indicated that the concentration of ino and zno on the surface was decreased after cl2 plasma treatment. reels data showed that the band gap increased from 3.4 to 3.7 ev. xps showed that ind5/2 and zn2p3/2 shifted to the higher binding energies by 0.5 ev and 0.3 ev,respectively. these phenomena were caused by oxygen deficiency and hydrocarbon contamination reduction as indicated by cl atom bonding with in and zn cations that are present on the surface after cl2 plasma treatment. © 2013 published by itb journal publisher.
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کلیدواژه
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Bandgap; Chlorine; GIZO; REELS; SIMS; XPS
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آدرس
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department of physics,hasanuddin university,jalan perintis kemerdekaan 10,tamalanrea, Indonesia, department of physics,chungbuk national university,cheongju, South Korea, department of physics,chungbuk national university,cheongju, South Korea, analytical engineering center,samsung advanced institute of technology,suwon, South Korea, analytical engineering center,samsung advanced institute of technology,suwon, South Korea, analytical engineering center,samsung advanced institute of technology,suwon, South Korea
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Authors
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