>
Fa   |   Ar   |   En
   Nanolithography on the electron beam resist using the scanning probe microscope cantilever  
   
نویسنده anggraini l. ,matsuzuka n. ,isono y.
منبع journal of mathematical and fundamental sciences - 2010 - دوره : 42 A - شماره : 1 - صفحه:1 -10
چکیده    This research demonstrates the feasibility of fabricating nanoscale resist patterns on a silicon (si) substrate using a scanning probe microscope(spm). in order to utilize scanning probe nanolithography (spnl) with the other micro-machining techniques such as dry etching,plating and lift-off process,nanoscale resist patterns should be created on an si substrate with high accuracy in spnl. we have,so far,established the negative type of spnl using the negative-tone electron beam (eb) resist named sal601. the primary objective of this research is to find out appropriate process conditions for establishing the positive type of spnl using the positive eb resist zep520a. this paper describes the variations of experimentally created nano-patterns depending on the process conditions,and determines the appropriate process conditions from the variations obtained. in addition,we analyzed the electric field in the eb resist by a finite element method (fem),for estimating the line width of the nanopattern created by spnl.
کلیدواژه Direct nano-patterning; Positive-tone electron beam (EB) resist; Scanning probe microscope (SPM); Scanning probe nanolithography (SPNL)
آدرس graduate school of science and engineering, Japan, college of science and engineering,ritsumeikan university,1-1-nojihigashi,kusatsu, Japan, graduate school of engineering,kobe university,1-1 rokkodai-cho,nada-ku,kobe, Japan
 
     
   
Authors
  
 
 

Copyright 2023
Islamic World Science Citation Center
All Rights Reserved