Impact of interface traps on direct and alternating current in tunneling field-effect transistors

We demonstrate the impact of semiconductor/oxide interface traps (its) on the dc and ac characteristics of tunnel field-effect transistors (tfets). using the sentaurus simulation tools,we show the impacts of trap density distribution and trap type on the n-type double gate- (dg-) tfet. the results show that the donor-type and acceptor-type its have the great influence on dc characteristic at midgap. donor-like and acceptor-like its have different mechanism of the turn-on characteristics. the flat band shift changes obviously and differently in the ac analysis,which results in contrast of peak shift of miller capacitor c gd for n-type tfets with donor-like and acceptor-like its. © 2015 zhi jiang et al.