electronic properties of boron and nitrogen doped silicene nano flake

In this paper, we study the effect of single boron/nitrogen impurity atom on electronic properties of a silicene nano flake. our calculations are based on density functional theory by using gaussian package. here, one si atom in silicene nano flake substitutes with a boron/nitrogen atom. the results show that substitution of one si atom with single boron/nitrogen atom increases distance of impurity atom with its nearest neighbors and changes hexagonal structure of silicene nano flake. doping silicene nano flake with a boron impurity atom makes its structure curved and causes to create a miniband in energy gap, which increases conductance consequently while doping with a nitrogen atom causes to produce two spin dependent midbands in energy gap which leads to creating a controllable spin dependent conductance with electron energy for silicene nano flake. therefore, nitrogen doped silicene nano flake is good material for design of nano electronic and spintronic devices.