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quantum modeling of light absorption in graphene based photo-transistors
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نویسنده
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faezinia hamid ,zavvari mahdi
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منبع
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journal of optoelectronical nanostructures - 2016 - دوره : 1 - شماره : 4 - صفحه:9 -20
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چکیده
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Graphene based optical devices are highly recommended and interested for integrated optical circuits. as a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. a quantum transport model is presented for simulation of a graphene nano-ribbon (gnr) -based photo-transistor based on non-equilibrium green’s function method. in the proposed model a self-energy matrix is introduced which takes the effect of optical absorption in gnr channel into account. the self-energy matrix is treated as a scattering matrix which leads to creation of carriers. the transition matrix element is calculated for optical absorption in graphene channel and is used to obtain the optical interaction self-energy. the resulting self-energy matrix is added to retarded green’s function and is used in transport equations for calculation of current flow in the photo-transistor. by considering the effect of optical radiation, the dark and photocurrent of detector are calculated and results are used for calculation of responsivity.
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کلیدواژه
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non-equilibrium green’s function; graphene nano-ribbon; photo-transistor; self energy.
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آدرس
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islamic azad university, tabriz branch, department of electronic engineering, ایران, islamic azad university, urmia branch, department of electronic engineering, ایران
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پست الکترونیکی
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m.zavvari@iaurmia.ac.ir
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Authors
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