controlling ambipolar current in a junctionless tunneling fet emphasizing on depletion region extension

For the first time, in this research, we introduce ajunctionless tunneling fet (j-tfet) on a uniform p+starting junctionless fet to realize appreciable immunityagainst inherent high ambipolar current (iamb). so, weutilize two isolated gates with appropriate workfunctionsover the channel and drain regions to create p+ip+n+charge distribution. this structure utilizes a spacebetween the gate-drain electrodes (sgd), to provide ap+ip+n+ structure thanks to the effective electronsdepletion on the drain side. increasing the sgd, furthereffectively pulls up the bands near the interface betweenthe channel-drain regions, widens the tunneling width fortunneling to occur, and thus in turn reduces the iamb from5.37×10^-7 a/µm to 1.14×10^-14 a/µm. thus, we point outthat the proposed j-tfet can obtain on-current thatsatisfies the expectation of logic applications with highperformance and ioff that meets the specifications of lowpower characteristics, a phenomenon that is rarelyaccessible with conventional tfets.