role of critical processing parameters on fundamental phenomena and characterizations of dc argon glow discharge

Given the significance of carefully analyzing the critical range for processing parameters in a sputtering system prior to experiments, as well as their effect on the quality of the deposited thin film, this crucial subject has been simulated and researched in this research. argon glow discharge conditions were obtained by altering essential processing factors such as electrode spacing, working pressure, and dc voltage delivered to the electrodes. the effect of changing these processing parameters on the potential difference and electric field profiles, ion- and electron-density, ion- and electronkinetic energy, and cross-section of fundamental processes has been investigated to study the deposition rate and microstructural characteristics of thin films. furthermore, the cross-section of fundamental ions-andelectron collision processes like ionization, elastic scattering, excitation, and charge exchange has been investigated.