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   observation of raman gain in reduced length of bismuth erbium doped fiber  
   
نویسنده shahi sharifeh ,momayezan parvaneh ,ranjbaran mohsen ,harun solaiman wadi
منبع journal of optoelectronical nanostructures - 2020 - دوره : 5 - شماره : 3 - صفحه:71 -80
چکیده    Raman amplification of a 49 cm bismuth oxide (bi2o3) as a nonlinear gain medium based erbium doped fiber amplifier (edfa) is reported in new and compact design in near infrared spectral regions. the bismuth glass host provides the opportunity to be doped heavily with erbium ions to allow a compact optical gain fiber amplifier design by using reduced fiber length and the 1480 nm low pump power around 150 mw. a extended raman amplification bandwidth of 45 nm, from 1520-1565 nm (c-band window) wavelengths is empirically proposed in a backward and dualwavelength pumped bi-edf by employing 350 mw raman pump in 1440 nm. because of the short length gain medium as a nonlinear bi-edf, amplification of 3 db is achieved over a c-band wavelength range. this simple c-band raman amplifier based brillouin and ase backscattering was constructed to test the forward, backward and dual-wavelength pump laser and on-off gain. a peak gain of 1.53 db was obtained with a 3-db bandwidth of 45 nm that the varieties of gain is 2.02 db around 1545 nm in backward pumping design. it array will be employ for sensing, spectroscopy and telecommunication systems.
کلیدواژه bi-edf ,compact gain medium ,c-band ,dual wavelength source ,raman gain
آدرس islamic azad university, isfahan (khorasgan) branch, laser and biophotonics in biotechnologies research center, iran, islamic azad university, isfahan (khorasgan) branch, laser and biophotonics in biotechnologies research center, iran, islamic azad university, isfahan (khorasgan) branch, laser and biophotonics in biotechnologies research center, iran, university of malaya, faculty of engineering, department of electrical engineering, malaysia
پست الکترونیکی swharun@um.edu.my
 
     
   
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