growth and characterization of thin mos2 films by low temperature chemical bath deposition method

Transition metal dichalcogenide (tmdc) materials are very important in electronic and optical integrated circuits and their growth is of great importance in this field. in this paper we present growth and fabrication of mos2 (molibdan disulfide) thin films by chemical bath method (cbd). the cbd method of growth makes it possible to simply grow large area scale of the thin layers of this material in lower temperatures (near room temperature) and atmosphere pressure in comparison to costly complicated growth methods. the results show the effect of growth temperature and time on the quality of layers and xrd measurements were performed for analysis of crystalline structure of layers. the results show that for the bath temperature of 60oc and for 75 min growth time, better quality of layers can be obtained with low intensity. the low intensity of xrd peaks belongs to poor crystalline structure of layers. for higher bath temperatures, the films lose their uniformity. the results were confirmed by sem images.