Green Method For Synthesizing Gallium Nitride Nanostructures At Low Temperature

Gallium nitride (gan) nanostructures (ns) were synthesized using pulsed direct current plasma enhanced chemical vapor deposition (pdc-pecvd) on quartz substrate at low temperature (600°c). gallium metal (ga) and nitrogen (n) plasma were used as precursors. the morphology and structure of the grown gan ns were characterized by field emission scanning electron microscope (fe-sem), transmission electron microscopy (tem) and x-ray diffraction (xrd). the xrd pattern shows that gan ns were grown in the hexagonal wurtzite-type crystal structure. the optical properties of the grown gan ns were examined by photoluminescence (pl), uvvisible and raman spectroscopy. the pl spectroscopy measurements of the grown gan ns showed blue shifts as compared to the gan bulk structure. the raman spectra displayed three raman active optical phonons at 534 cm^-1, 570 cm^-1 and 730 cm^-1 due to a1 (to), e2 (high) and a1 (lo), respectively.