Annealing Effects on the Photoluminescence and Optical Properties of In-Doped CdS Films

Among the ii–iv semiconductor compounds, cds (band gap ~2.43 ev) have large applications as photoconductors, in semiconductor lasers, nonlinear optical devices and photovoltaic solar cells. in this work; in-doped cds (cds:in) films were fabricated on glass substrates by ultrasonic spray pyrolysis (usp) method. the obtained samples were annealed in air at 450 °c for two different times as 1 and 2 hours. effects of annealing on the surface and optical properties of cds:in films were investigated by atomic force microscopy (afm), optical transmittance and the room temperature photoluminescence (pl) spectroscopy. thicknesses of the films, refractive indices and extinction coefficient values were determined by spectroscopic ellipsometry technique using cauchy–urbach model. the optical transmittance spectra showed that the annealing process improves the optical transmittance in the visible region.