Analysis of the Mosaic Defects in Graded and Non Graded InxGa1‐xN Solar Cell Structures

In this study, graded (a) inxga1‐xn (10.5 ≤ x ≤ 18.4) and non graded (b)inxga1‐xn (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrateusing the metal organic chemical vapour deposition (mocvd) technique. thestructural, optical and electrical features of the grown ingan/gan solar cellstructures are analyzed using high resolution x‐ray diffraction (hrxrd),photoluminescense (pl), ultraviolet (uv), current density and potential (jv)measurements. according to the hrxrd results; it is determined that the inganlayer of the graded structure has a lower fwhm (full width at half maximum)value. from the pl measurements, it is observed that the gan half‐width peakvalue of the graded sample is narrower and the ingan peak width value of thegraded sample is larger. from uv measurements, that the graded sample has agreater band range. jv measurements determine that the performance of thegraded structure is higher.