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Investigation of resistive switching in Anodized titanium Dioxide thin films
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نویسنده
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saraei a. ,eshraghi m.j. ,massoudi a.
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منبع
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advanced ceramics progress - 2016 - دوره : 2 - شماره : 3 - صفحه:34 -37
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چکیده
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In this work, tio_2 nanostructures were grown on titanium thin films by electrochemical anodizing method. the bipolar resistive switching effect has been observed in pt/tio_2/ti device. resistive switching characteristics indicate that the porous tio_2 are one of the potential materials for nonvolatile memory applications. increasing anodizing duration will increase pore lengths which in turn causes increase in high resistance and low resistance differences.
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کلیدواژه
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Anodized Titanium Dioxide ,Resistive Switching ,Porous Materials
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آدرس
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materials and energy research center, department of semiconductors, ایران, materials and energy research center, department of semiconductors, ایران, materials and energy research center, department of semiconductors, ایران
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Authors
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