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Implementation of EIS for Dopant Profile Analysis in n-type Silicon
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نویسنده
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saraei a. ,eshraghi m.j. ,tajabadi f. ,massoudi a.
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منبع
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advanced ceramics progress - 2017 - دوره : 3 - شماره : 1 - صفحه:16 -20
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چکیده
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An experimental setup has been developed for successive photo-electrochemical etching and eis measurement of semiconductor samples. furthermore, an algorithm based on electrochemical capacitance-voltage (ecv) has been developed for calculating dopant profile based on the measurements by the developed setup. phosphorous diffusion profile in silicon was estimated by employing the developed setup and algorithms. measurements by proposing setup and algorithm are in good agreement with commercial ecv instrument and obtained results were compared with dopant profile-resistivity correspondence method.
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کلیدواژه
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ECV ,Depth profile ,Doping
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آدرس
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materials and energy research center, department of semiconductor, ایران, materials and energy research center, department of semiconductor, ایران, materials and energy research center, department of nanomaterials and advanced materials, ایران, materials and energy research center, department of semiconductor, ایران
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Authors
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