The Electrical Properties of Au/PTCDA/n-Si Diodes with Electron Beam Irradiated PTCDA Interfacial Layer

In this work, it is aimed to improve the device performance of traditional au / n-si schottky diodes (sds) with an innovative approach using the irradiated ptcda interfacial layer. for this reason, first ptcda powders were irradiated with different electron beam (e-beam) doses of 30kgy, 60kgy and 100kgy and the results were analyzed by ftir method. unirradiated and irradiated ptcda powders with e-beam were evaporated on n-si substrate via organic evaporator. current-voltage (i-v) characteristics of unirradiated and irradiated au/ptcda/n-si sds with ptcda interfacial layers irradiated with different e-beam doses of 30kgy, 60kgy and 100kgy were carried out between ±3v at room temperature. the ideality factor (n), schottky barrier height (bo), rectification ratio (do), series resistance (rs) and shunt resistance (rsh) of devices were calculated from current-voltage (i-v) results. it is experimentally seen that performance of au/ptcda/n-si sd irradiated with 30 kgy has better results when we compared unirradiated au/ptcda/n-si sd. it has been observed that the i-v characteristics of the au/ptcda/n-si sd are highly influenced by irradiation and the device performance can be improved with appropriate irradiation dose.