Simulation of Ir Detector At Communication Window of 1550nm Based on Graphene

In this paper, photodetection properties of a graphene-based device at the third telecommunication window have been reported. the structure of the device is a graphene-silicon schottky junction which has been simulated in the form of an infrared photodetector. graphene has specific electrical and optical properties which makes this material a good candidate for optoelectronic applications. photodetection characteristic of graphene-silicon schottky junction is investigated by measuring the (current-voltage) curve at the third telecommunication window under 1550nm radiations. the dc electrical characteristic of the device is calculated. the simulated rectifier junction has a potential barrier of 0.31ev, the ideality factor of 2.7 and the saturation current of 10-11a. the detector responsivity under 1550nm radiations is measured about 20ma/w which is an order of magnitude larger than other si-based detectors in this wavelength. the internal quantum efficiency (qein) is calculated about 60% while the external quantum efficiency (qeex) is measured to be 1.6%. a comprehensive theoretical justification is presented based on fowler theory which allows comparison between the simulation results and the theoretical predictions. for simulating graphene, a user-defined material is introduced to tcad-silvaco software which includes all electrical and optical properties of this novel 2d material. graphene optical properties, specifically at near-ir region (up to 2um wavelength), have been extracted from the real measurement results. graphene is a si-compatible material which can provide a sensitive ir detector integrated with other si-based devices.