a novel ultra-broad band, high gain, and low noise distributed amplifier using modified regulated cascode configuration (mrgc) gain-cell

In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness cmos distributed lifier (cmos-da) based on a novel gain-cell is presented. the new gain-cell that enhances the output impedance as a result the gain substantially over conventional rgc is the improved version of regulated cascode configuration (rgc). the new gain-cell based cmos-da is analyzed and simulated in the standard 0.13 μm-cmos technology. the simulated results of the proposed cmos-da are included 14.2 db average power gain with less than ± 0.5 db fluctuations over the 3-db bandwidth of 23 ghz while the simulated input and output return losses (s11 and s22) are less than -10 db. the iip3 and input referred 1-db compression point are simulated at 15 ghz and achieved +8 dbm and -6.34 dbm, respectively. the average noise figure (nf) in the entire interest band has a low value of 3.65 db, and the dc power dissipation is only 45.63 mw. the cmos-da is powered by 0.9 v supply voltage. additionally, the effect of parameters variation on performance specifications of the proposed design is simulated by monte carlo simulations to ensure that the desired accuracy is yielded.