Studies on a-Se/n-Si and a-Te/n-Si Heterojunctions

Heterojunctions are fabricated by depositing amorphous selenium (a-se) and amorphous tellurium (a-te) films on n-type single (n-si) wafers by the method of vacuum evaporation. the silicon wafers have surface orientation of (111). resistivity of each silicon wafer is 5ω-cm and carrier concentration of 8.30 x 10^14cm^-3. two of the junction devices are annealed in a vacuum for half an hour. current-voltage measurements are made at room temperature (298k). rectification properties are observed in all the junctions. barrier heights of a-se/n-si junctions are higher than a-te/n-si junctions. the current density in annealed junctions is lower than in as-deposited (unannealed) counterpart.