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Photoluminescence Behavior of Cu2+xZn1-xSnS4 Thin Films by SILAR Method
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نویسنده
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henry j. ,mohanraj k. ,sivakumar g.
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منبع
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jordan journal of physics - 2018 - دوره : 11 - شماره : 2 - صفحه:101 -105
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چکیده
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Cu2znsns4 thin films were deposited on a glass substrate by chemical method. the xrd pattern confirms the formation of tetragonal structure czts and peak shift is noticed for cu doping. the absorption coefficient is in the order of 10^4cm^-1 and the band gap is found to be about 1.9 ev – 1.75 ev. the pl spectra show red shift for higher cu doping concentrations.
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کلیدواژه
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Photoluminescence ,Cu2ZnSnS4 thin films ,SILAR Method ,XRD
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آدرس
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manonmaniam sundaranar university, department of physics, India, manonmaniam sundaranar university, department of physics, India, annamalai university, department of physics, India
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پست الکترونیکی
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kmohanraj.msu@gmail.com; mohanraj@msuniv.ac.in
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Authors
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