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   A complementary metal oxide semiconductor (CMOS) bandpass filter for cost-efficient radio frequency (RF) appliances  
   
نویسنده bhuiyan m.a.s. ,omar m.b. ,reaz m.b.i. ,kamal n. ,ali s.h.m.
منبع journal of engineering research - 2016 - دوره : 4 - شماره : 3 - صفحه:114 -127
چکیده    A band pass filter is an inherent part of every radio frequency (rf) transceiver. the usage of spiral inductors in band-pass filters cannot overcome limitations such as loss due to parasitic effects,large chip area,low quality factor,less tenability,etc. therefore,this paper presents an active inductor based design of a second order bandpass filter in 0.18μm complementary metal oxide semiconductor (cmos) technology for 2.4 ghz radio frequency (rf) applications. the centre frequency of the proposed band pass filter can be adjusted from 1.86 ghz to 3.33 ghz with high q factor of 250 at 2.45ghz. this filter dissipates only 3.407 mw at 1.5v supply voltage and occupies only 0.0014 mm2 chip area.
کلیدواژه Active inductor; Band-pass filter; Complementary metal oxide semiconductor; Integrated circuits; Radio frequency
آدرس department of electrical,electronic and systems engineering,universiti kebangsaan malaysia,bangi,selangor, Malaysia, department of electrical,electronic and systems engineering,universiti kebangsaan malaysia,bangi,selangor, Malaysia, department of electrical,electronic and systems engineering,universiti kebangsaan malaysia,bangi,selangor, Malaysia, department of electrical,electronic and systems engineering,universiti kebangsaan malaysia,bangi,selangor, Malaysia, department of electrical,electronic and systems engineering,universiti kebangsaan malaysia,bangi,selangor, Malaysia
 
     
   
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